...III-V junctions—gallium indium phosphide (GaInP) and gallium arsenide...alloy. Ga x In y P z : Gallium indium phosphide. (Al)GaInP: (Aluminum) gallium indium phosphide. GaAs: Gallium arsenide...
http://spie.org/x35978.xml
...Arsenide), GaP (Gallium Phosphide), GaSb (Gallium Antimonide), InAs (Indium Arsenide), InP (Indium Phosphide), InSb (Indium Antimonide). MOCVD Epitaxy on III-V substrates. SiC wafers. Other Materials...
http://www.el-cat.com/
Indium phosphide (In P) is a binary semiconductor composed of indium and phosphorus. It has a face-centered cubic ("zincblende") crystal structure, identical to that of GaAs and ...
http://en.wikipedia.org/wiki/Indium_phosphide
...the 1490/1310 nm wavelength pair to achieve up to 2.5 Gbit/s in a single fiber. The company claims that its Indium Phosphide IC technology allows all active and passive transceiver components to be integrated into a single on-chip waveguide...
http://www.edn.com/blog/1690000169/post/560048656.html
...increased power-leakage from the transmitter to the receiver, which can overload the inputs of circuits using existing indium-phosphide (InP)- and GaAs-based technologies, resulting in breakdowns. As a result, there has been a desire to develop...
http://www.i-micronews.com/lectureArticle.asp?id=3578